APA (7th ed.) Citation

Hutchins‐Delgado, T. A., Gangwal, S., Akwabli, S., Bradicich, A., Petluru, P., Stanchu, H., . . . Lu, T. (2026). Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering. Small Science, 6(4), 1. https://doi.org/10.1002/smsc.202500589

Chicago Style (17th ed.) Citation

Hutchins‐Delgado, Troy A., et al. "Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering." Small Science 6, no. 4 (2026): 1. https://doi.org/10.1002/smsc.202500589.

MLA (9th ed.) Citation

Hutchins‐Delgado, Troy A., et al. "Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering." Small Science, vol. 6, no. 4, 2026, p. 1, https://doi.org/10.1002/smsc.202500589.