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Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices.

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Title: Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices.
Authors: Lagrave, Jules1 (AUTHOR), Bernier, Nicolas1 (AUTHOR), Jalabert, Thomas1 (AUTHOR), Brûlé, Yoann1 (AUTHOR), Térébénec, Damien1 (AUTHOR), Meilleur, Pierre1 (AUTHOR), Roussel, Hervé2 (AUTHOR), Dory, Jean‐Baptiste1 (AUTHOR), Mouawad, Oussama J.1 (AUTHOR), Chommaux, Thibault3 (AUTHOR), Mocuta, Cristian3 (AUTHOR), Thiaudière, Dominique3 (AUTHOR), Vila, Laurent4 (AUTHOR), Hippert, Françoise2 (AUTHOR), Noé, Pierre1 (AUTHOR) pierre.noe@cea.fr
Source: Advanced Science. May2026, p1. 13p. 6 Illustrations.
Database: Academic Search Ultimate
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Science%22">Advanced Science</searchLink>. May2026, p1. 13p. 6 Illustrations.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=193909666
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        Value: 10.1002/advs.75711
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        Text: English
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        PageCount: 13
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      – TitleFull: Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices.
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              Text: May2026
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