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Unveiling the Roles of Bulk and Interface Defects of a High-K Dielectric TiO 2 -Based Charge-Trapping Layer in the Device Failure of Non-Volatile Charge-Trapping Memory.

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Title: Unveiling the Roles of Bulk and Interface Defects of a High-K Dielectric TiO 2 -Based Charge-Trapping Layer in the Device Failure of Non-Volatile Charge-Trapping Memory.
Authors: Xia, Zhaoqing1 (AUTHOR), He, Yukai1 (AUTHOR), Lv, Lin1 (AUTHOR) nh3197198089@163.com, Niu, Huan1 (AUTHOR), Zheng, Zebin1 (AUTHOR), Liu, Xiaoshan1 (AUTHOR), Dong, Wenjing1 (AUTHOR), Wang, Xunying1 (AUTHOR) houzhaow@hubu.edu.cn, Wan, Houzhao1 (AUTHOR), Ma, Guokun1 (AUTHOR), Wang, Hao1 (AUTHOR)
Source: Surfaces (2571-9637). Jun2026, Vol. 9 Issue 2, p35. 17p.
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              Text: Jun2026
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