栾森, 齐小方, 马文成, & 徐永宽. (2026). 籽晶离轴角度对顶部籽晶溶液法SiC 晶体中基平面 位错分布的影响. Journal of Synthetic Crystals, 55(6), 886. https://doi.org/10.16553/j.cnki.issn1000-985x.2026.0021
Chicago Style (17th ed.) Citation栾森, 齐小方, 马文成, and 徐永宽. "籽晶离轴角度对顶部籽晶溶液法SiC 晶体中基平面 位错分布的影响." Journal of Synthetic Crystals 55, no. 6 (2026): 886. https://doi.org/10.16553/j.cnki.issn1000-985x.2026.0021.
MLA (9th ed.) Citation栾森, et al. "籽晶离轴角度对顶部籽晶溶液法SiC 晶体中基平面 位错分布的影响." Journal of Synthetic Crystals, vol. 55, no. 6, 2026, p. 886, https://doi.org/10.16553/j.cnki.issn1000-985x.2026.0021.
Warning: These citations may not always be 100% accurate.
