APA (7th ed.) Citation

Lagrave, J., Bernier, N., Jalabert, T., Brûlé, Y., Térébénec, D., Meilleur, P., . . . Noé, P. (2026). Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices. Advanced Science, 13(47), 1. https://doi.org/10.1002/advs.75711

Chicago Style (17th ed.) Citation

Lagrave, Jules, et al. "Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices." Advanced Science 13, no. 47 (2026): 1. https://doi.org/10.1002/advs.75711.

MLA (9th ed.) Citation

Lagrave, Jules, et al. "Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices." Advanced Science, vol. 13, no. 47, 2026, p. 1, https://doi.org/10.1002/advs.75711.