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Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate.

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Title: Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate.
Authors: Mahapatra, R.1 rajat.mahapatra@ncl.ac.uk, Poolamai, N.1, Chattopadhyay, S.1, Wright, N. G.1, Chakraborty, Amit K.2, Coleman, Karl S.2, Coleman, P. G.3, Burrows, C. P.3
Source: Applied Physics Letters. 2/13/2006, Vol. 88 Issue 7, p072910. 3p. 5 Graphs.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 19876348
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Characterization of thermally oxidized Ti/SiO<subscript>2</subscript> gate dielectric stacks on 4H–SiC substrate.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 2/13/2006, Vol. 88 Issue 7, p072910. 3p. 5 Graphs.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=19876348
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        Value: 10.1063/1.2173713
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      – Code: eng
        Text: English
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      – TitleFull: Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate.
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              Text: 2/13/2006
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