APA (7th ed.) Citation

Li, J. Z., Bai, J., Park, J., Adekore, B., Fox, K., Carroll, M., . . . Shellenbarger, Z. (2007). Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping. Applied Physics Letters, 91(2), 021114. https://doi.org/10.1063/1.2756165

Chicago Style (17th ed.) Citation

Li, J. Z., J. Bai, J.-S Park, B. Adekore, K. Fox, M. Carroll, A. Lochtefeld, and Z. Shellenbarger. "Defect Reduction of GaAs Epitaxy on Si (001) Using Selective Aspect Ratio Trapping." Applied Physics Letters 91, no. 2 (2007): 021114. https://doi.org/10.1063/1.2756165.

MLA (9th ed.) Citation

Li, J. Z., et al. "Defect Reduction of GaAs Epitaxy on Si (001) Using Selective Aspect Ratio Trapping." Applied Physics Letters, vol. 91, no. 2, 2007, p. 021114, https://doi.org/10.1063/1.2756165.