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Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping.

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Title: Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping.
Authors: Li, J. Z.1, Bai, J.1, Park, J.-S.1, Adekore, B.1, Fox, K.1, Carroll, M.1, Lochtefeld, A.1, Shellenbarger, Z.2
Source: Applied Physics Letters. 7/9/2007, Vol. 91 Issue 2, p021114. 3p. 2 Diagrams, 1 Graph.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 25857885
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 7/9/2007, Vol. 91 Issue 2, p021114. 3p. 2 Diagrams, 1 Graph.
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        Value: 10.1063/1.2756165
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      – Code: eng
        Text: English
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        StartPage: 021114
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      – TitleFull: Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping.
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            NameFull: Li, J. Z.
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              M: 07
              Text: 7/9/2007
              Type: published
              Y: 2007
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            – TitleFull: Applied Physics Letters
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