APA (7th ed.) Citation

Liu, C., Chou, L., Hong, L., & Jiang, J. (2008). Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4. Journal of the American Chemical Society, 130(16), 5440. https://doi.org/10.1021/ja710802s

Chicago Style (17th ed.) Citation

Liu, Chie-Sheng, Li-Wei Chou, Lu-Sheng Hong, and Jyh-Chiang Jiang. "Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 X 1 to GeH4." Journal of the American Chemical Society 130, no. 16 (2008): 5440. https://doi.org/10.1021/ja710802s.

MLA (9th ed.) Citation

Liu, Chie-Sheng, et al. "Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 X 1 to GeH4." Journal of the American Chemical Society, vol. 130, no. 16, 2008, p. 5440, https://doi.org/10.1021/ja710802s.