APA (7th ed.) Citation

Li, J. Z., Bai, J., Major, C., Carroll, M., Lochtefeld, A., & Shellenbarger, Z. (2008). Defect reduction of GaAs/Si epitaxy by aspect ratio trapping. Journal of Applied Physics, 103(10), 106102. https://doi.org/10.1063/1.2924410

Chicago Style (17th ed.) Citation

Li, J. Z., J. Bai, C. Major, M. Carroll, A. Lochtefeld, and Z. Shellenbarger. "Defect Reduction of GaAs/Si Epitaxy by Aspect Ratio Trapping." Journal of Applied Physics 103, no. 10 (2008): 106102. https://doi.org/10.1063/1.2924410.

MLA (9th ed.) Citation

Li, J. Z., et al. "Defect Reduction of GaAs/Si Epitaxy by Aspect Ratio Trapping." Journal of Applied Physics, vol. 103, no. 10, 2008, p. 106102, https://doi.org/10.1063/1.2924410.