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Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.

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Title: Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.
Authors: Li, J. Z.1, Bai, J.1, Major, C.1, Carroll, M.1, Lochtefeld, A.1, Shellenbarger, Z.2
Source: Journal of Applied Physics. May2008, Vol. 103 Issue 10, p106102. 3p. 3 Diagrams, 1 Graph.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
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AccessLevel: 2
PubType: Academic Journal
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  Data: <searchLink fieldCode="AR" term="%22Li%2C+J%2E+Z%2E%22">Li, J. Z.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bai%2C+J%2E%22">Bai, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Major%2C+C%2E%22">Major, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Carroll%2C+M%2E%22">Carroll, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lochtefeld%2C+A%2E%22">Lochtefeld, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Shellenbarger%2C+Z%2E%22">Shellenbarger, Z.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. May2008, Vol. 103 Issue 10, p106102. 3p. 3 Diagrams, 1 Graph.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=32509918
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      – Type: doi
        Value: 10.1063/1.2924410
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 106102
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      – TitleFull: Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.
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            NameFull: Li, J. Z.
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            NameFull: Bai, J.
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            NameFull: Major, C.
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            NameFull: Carroll, M.
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            NameFull: Lochtefeld, A.
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              M: 05
              Text: May2008
              Type: published
              Y: 2008
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