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Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.

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Bibliographic Details
Title: Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.
Authors: Li, J. Z.1, Bai, J.1, Major, C.1, Carroll, M.1, Lochtefeld, A.1, Shellenbarger, Z.2
Source: Journal of Applied Physics. May2008, Vol. 103 Issue 10, p106102. 3p. 3 Diagrams, 1 Graph.
Database: Academic Search Ultimate
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