Sanford, N. A., Blanchard, P. T., Bertness, K. A., Mansfield, L., Schlager, J. B., Sanders, A. W., . . . George, S. M. (2010). Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 107(3), 034318. https://doi.org/10.1063/1.3275888
Chicago Style (17th ed.) CitationSanford, N. A., P. T. Blanchard, K. A. Bertness, L. Mansfield, J. B. Schlager, A. W. Sanders, A. Roshko, B. B. Burton, and S. M. George. "Steady-state and Transient Photoconductivity in C-axis GaN Nanowires Grown by Nitrogen-plasma-assisted Molecular Beam Epitaxy." Journal of Applied Physics 107, no. 3 (2010): 034318. https://doi.org/10.1063/1.3275888.
MLA (9th ed.) CitationSanford, N. A., et al. "Steady-state and Transient Photoconductivity in C-axis GaN Nanowires Grown by Nitrogen-plasma-assisted Molecular Beam Epitaxy." Journal of Applied Physics, vol. 107, no. 3, 2010, p. 034318, https://doi.org/10.1063/1.3275888.