Strain-induced island scaling during Si[sub 1-x]Ge[sub x] heteroepitaxy.

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Bibliographic Details
Title: Strain-induced island scaling during Si[sub 1-x]Ge[sub x] heteroepitaxy.
Authors: Dorsch, W., Strunk, H. P., Wawra, H., Wagner, G., Groenen, J., Carles, R.
Source: Applied Physics Letters. 1/12/1998, Vol. 72 Issue 2. 6 Black and White Photographs, 1 Chart, 1 Graph.
Database: Academic Search Ultimate
Description
ISSN:00036951
DOI:10.1063/1.120622