Song, J., Zhang, H., Hu, H., Dai, X., & Xuan, R. (2010). Valence band structure of strained Si/(111)Si1− xGe x. SCIENCE CHINA Physics, Mechanics & Astronomy, 53(3), 454. https://doi.org/10.1007/s11433-010-0093-2
Chicago Style (17th ed.) CitationSong, JianJun, HeMing Zhang, HuiYong Hu, XianYing Dai, and RongXi Xuan. "Valence Band Structure of Strained Si/(111)Si1− XGe X." SCIENCE CHINA Physics, Mechanics & Astronomy 53, no. 3 (2010): 454. https://doi.org/10.1007/s11433-010-0093-2.
MLA (9th ed.) CitationSong, JianJun, et al. "Valence Band Structure of Strained Si/(111)Si1− XGe X." SCIENCE CHINA Physics, Mechanics & Astronomy, vol. 53, no. 3, 2010, p. 454, https://doi.org/10.1007/s11433-010-0093-2.
Warning: These citations may not always be 100% accurate.