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Valence band structure of strained Si/(111)Si1− xGe x.

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Bibliographic Details
Title: Valence band structure of strained Si/(111)Si1− xGe x.
Authors: Song, JianJun1 wmshhsong@tom.com, Zhang, HeMing1, Hu, HuiYong1, Dai, XianYing1, Xuan, RongXi1
Source: SCIENCE CHINA Physics, Mechanics & Astronomy. Mar2010, Vol. 53 Issue 3, p454-457. 4p.
Database: Academic Search Ultimate
Description
ISSN:16747348
DOI:10.1007/s11433-010-0093-2