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Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition.

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Title: Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition.
Authors: Gammon, P. M.1 P.M.Gammon@Warwick.ac.uk, Pérez-Tomás, A.2, Jennings, M. R.1, Shah, V. A.3, Boden, S. A.4, Davis, M. C.1, Burrows, S. E.3, Wilson, N. R.3, Roberts, G. J.1, Covington, J. A.1, Mawby, P. A.1
Source: Journal of Applied Physics. Jul2010, Vol. 107 Issue 12, p124512. 8p. 3 Diagrams, 1 Chart, 5 Graphs.
Database: Academic Search Ultimate
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. Jul2010, Vol. 107 Issue 12, p124512. 8p. 3 Diagrams, 1 Chart, 5 Graphs.
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        Value: 10.1063/1.3449057
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              Text: Jul2010
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