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Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.

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Title: Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.
Authors: Bright, A. N., Humphreys, C. J.
Source: Philosophical Magazine B. 11/1/2001, Vol. 81 Issue 11, p1725-1744. 20p.
Database: Academic Search Ultimate
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  Data: Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.
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  Data: <searchLink fieldCode="JN" term="%22Philosophical+Magazine+B%22">Philosophical Magazine B</searchLink>. 11/1/2001, Vol. 81 Issue 11, p1725-1744. 20p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=5801984
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        Value: 10.1080/13642810110079962
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      – TitleFull: Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.
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