Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.

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Bibliographic Details
Title: Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.
Authors: Bright, A. N., Humphreys, C. J.
Source: Philosophical Magazine B. 11/1/2001, Vol. 81 Issue 11, p1725-1744. 20p.
Database: Academic Search Ultimate
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