Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy.
Saved in:
| Title: | Identification of interfacial layers in Ohmic contacts to n-type GaN and Al [sub x] Ga[sub 1– x] N/GaN heterostructures using high-resolution electron microscopy. |
|---|---|
| Authors: | Bright, A. N., Humphreys, C. J. |
| Source: | Philosophical Magazine B. 11/1/2001, Vol. 81 Issue 11, p1725-1744. 20p. |
| Database: | Academic Search Ultimate |
Be the first to leave a comment!