APA (7th ed.) Citation

Watkins, S. P., Nissen, M. K., Haacke, G., & Handler, E. M. (1992). Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine. Journal of Applied Physics, 72(7), 2797. https://doi.org/10.1063/1.352344

Chicago Style (17th ed.) Citation

Watkins, S. P., M. K. Nissen, G. Haacke, and E. M. Handler. "Residual Donor and Acceptor Incorporation in InP Grown Using Trimethylindium and Tertiarybutylphosphine." Journal of Applied Physics 72, no. 7 (1992): 2797. https://doi.org/10.1063/1.352344.

MLA (9th ed.) Citation

Watkins, S. P., et al. "Residual Donor and Acceptor Incorporation in InP Grown Using Trimethylindium and Tertiarybutylphosphine." Journal of Applied Physics, vol. 72, no. 7, 1992, p. 2797, https://doi.org/10.1063/1.352344.