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Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine.

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Bibliographic Details
Title: Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine.
Authors: Watkins, S. P., Nissen, M. K., Haacke, G., Handler, E. M.
Source: Journal of Applied Physics. 10/1/1992, Vol. 72 Issue 7, p2797. 5p.
Database: Academic Search Ultimate
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