APA (7th ed.) Citation

Tell, B., Brown-Goebeler, K. F., Bridges, T. J., & Burkhardt, E. G. (1986). Resistance and mobility changes in InGaAs produced by light ion bombardment. Journal of Applied Physics, 60(2), 665. https://doi.org/10.1063/1.337410

Chicago Style (17th ed.) Citation

Tell, B., K. F. Brown-Goebeler, T. J. Bridges, and E. G. Burkhardt. "Resistance and Mobility Changes in InGaAs Produced by Light Ion Bombardment." Journal of Applied Physics 60, no. 2 (1986): 665. https://doi.org/10.1063/1.337410.

MLA (9th ed.) Citation

Tell, B., et al. "Resistance and Mobility Changes in InGaAs Produced by Light Ion Bombardment." Journal of Applied Physics, vol. 60, no. 2, 1986, p. 665, https://doi.org/10.1063/1.337410.