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Resistance and mobility changes in InGaAs produced by light ion bombardment.

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Bibliographic Details
Title: Resistance and mobility changes in InGaAs produced by light ion bombardment.
Authors: Tell, B., Brown-Goebeler, K. F., Bridges, T. J., Burkhardt, E. G.
Source: Journal of Applied Physics. 7/15/1986, Vol. 60 Issue 2, p665. 3p.
Database: Academic Search Ultimate
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