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Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.

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Bibliographic Details
Title: Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
Authors: Yew, Tri-Rung, Reif, Rafael
Source: Journal of Applied Physics. 3/15/1989, Vol. 65 Issue 6, p2500. 8p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 7633862
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
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  Data: <searchLink fieldCode="AR" term="%22Yew%2C+Tri-Rung%22">Yew, Tri-Rung</searchLink><br /><searchLink fieldCode="AR" term="%22Reif%2C+Rafael%22">Reif, Rafael</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. 3/15/1989, Vol. 65 Issue 6, p2500. 8p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=7633862
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        Value: 10.1063/1.342796
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 2500
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      – TitleFull: Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
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            NameFull: Yew, Tri-Rung
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            NameFull: Reif, Rafael
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              Text: 3/15/1989
              Type: published
              Y: 1989
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              Value: 65
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              Value: 6
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