APA (7th ed.) Citation

Yew, T., Lin, Y., Shieh, M., & Chen, C. (1993). Structural properties of silicon epitaxy grown at 200–600 °C by electron-beam evaporation in an ultrahigh vacuum system. Journal of Applied Physics, 73(10), 4932. https://doi.org/10.1063/1.353811

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, Yung-Jen Lin, Ming-Deng Shieh, and Cheng-Hsien Chen. "Structural Properties of Silicon Epitaxy Grown at 200–600 °C by Electron-beam Evaporation in an Ultrahigh Vacuum System." Journal of Applied Physics 73, no. 10 (1993): 4932. https://doi.org/10.1063/1.353811.

MLA (9th ed.) Citation

Yew, Tri-Rung, et al. "Structural Properties of Silicon Epitaxy Grown at 200–600 °C by Electron-beam Evaporation in an Ultrahigh Vacuum System." Journal of Applied Physics, vol. 73, no. 10, 1993, p. 4932, https://doi.org/10.1063/1.353811.