APA (7th ed.) Citation

Burger, W. R., & Reif, R. (1988). Electrical quality of low-temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate. Journal of Applied Physics, 63(2), 383. https://doi.org/10.1063/1.340249

Chicago Style (17th ed.) Citation

Burger, W. R., and R. Reif. "Electrical Quality of Low-temperature (Tdep=775 °C) Epitaxial Silicon: The Effect of Deposition Rate." Journal of Applied Physics 63, no. 2 (1988): 383. https://doi.org/10.1063/1.340249.

MLA (9th ed.) Citation

Burger, W. R., and R. Reif. "Electrical Quality of Low-temperature (Tdep=775 °C) Epitaxial Silicon: The Effect of Deposition Rate." Journal of Applied Physics, vol. 63, no. 2, 1988, p. 383, https://doi.org/10.1063/1.340249.