APA (7th ed.) Citation

Burger, W. R., & Reif, R. (1987). An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and pn junction characterization. Journal of Applied Physics, 62(10), 4255. https://doi.org/10.1063/1.339099

Chicago Style (17th ed.) Citation

Burger, W. R., and R. Reif. "An Optimized in Situ Argon Sputter Cleaning Process for Device Quality Low-temperature (T≤800 °C) Epitaxial Silicon: Bipolar Transistor and Pn Junction Characterization." Journal of Applied Physics 62, no. 10 (1987): 4255. https://doi.org/10.1063/1.339099.

MLA (9th ed.) Citation

Burger, W. R., and R. Reif. "An Optimized in Situ Argon Sputter Cleaning Process for Device Quality Low-temperature (T≤800 °C) Epitaxial Silicon: Bipolar Transistor and Pn Junction Characterization." Journal of Applied Physics, vol. 62, no. 10, 1987, p. 4255, https://doi.org/10.1063/1.339099.