APA (7th ed.) Citation

Song, J., Zhang, H., Hu, H., Wang, X., & Wang, G. (2012). Hole mobility enhancement of Si by rhombohedral strain. SCIENCE CHINA Physics, Mechanics & Astronomy, 55(8), 1399. https://doi.org/10.1007/s11433-012-4755-0

Chicago Style (17th ed.) Citation

Song, JianJun, HeMing Zhang, HuiYong Hu, XiaoYan Wang, and GuanYu Wang. "Hole Mobility Enhancement of Si by Rhombohedral Strain." SCIENCE CHINA Physics, Mechanics & Astronomy 55, no. 8 (2012): 1399. https://doi.org/10.1007/s11433-012-4755-0.

MLA (9th ed.) Citation

Song, JianJun, et al. "Hole Mobility Enhancement of Si by Rhombohedral Strain." SCIENCE CHINA Physics, Mechanics & Astronomy, vol. 55, no. 8, 2012, p. 1399, https://doi.org/10.1007/s11433-012-4755-0.