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Hole mobility enhancement of Si by rhombohedral strain.

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Title: Hole mobility enhancement of Si by rhombohedral strain.
Authors: Song, JianJun1 wmshhsong@tom.com, Zhang, HeMing1, Hu, HuiYong1, Wang, XiaoYan1, Wang, GuanYu1
Source: SCIENCE CHINA Physics, Mechanics & Astronomy. Aug2012, Vol. 55 Issue 8, p1399-1403. 5p.
Database: Academic Search Ultimate
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  Data: Hole mobility enhancement of Si by rhombohedral strain.
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  Data: <searchLink fieldCode="AR" term="%22Song%2C+JianJun%22">Song, JianJun</searchLink><relatesTo>1</relatesTo><i> wmshhsong@tom.com</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+HeMing%22">Zhang, HeMing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hu%2C+HuiYong%22">Hu, HuiYong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+XiaoYan%22">Wang, XiaoYan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+GuanYu%22">Wang, GuanYu</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22SCIENCE+CHINA+Physics%2C+Mechanics+%26+Astronomy%22">SCIENCE CHINA Physics, Mechanics & Astronomy</searchLink>. Aug2012, Vol. 55 Issue 8, p1399-1403. 5p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=77568965
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        Value: 10.1007/s11433-012-4755-0
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        Text: English
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              Text: Aug2012
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