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Modeling boron profiles in silicon after pulsed excimer laser annealing.

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Bibliographic Details
Title: Modeling boron profiles in silicon after pulsed excimer laser annealing.
Authors: Hackenberg, M.1, Huet, K.2, Negru, R.2, Venturini, J.2, Fisicaro, G.3, La Magna, A.3, Pichler, P.4
Source: AIP Conference Proceedings. Nov2012, Vol. 1496 Issue 1, p241-244. 4p.
Database: Academic Search Ultimate
Description
ISSN:0094243X
DOI:10.1063/1.4766533