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Modeling boron profiles in silicon after pulsed excimer laser annealing.

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Title: Modeling boron profiles in silicon after pulsed excimer laser annealing.
Authors: Hackenberg, M.1, Huet, K.2, Negru, R.2, Venturini, J.2, Fisicaro, G.3, La Magna, A.3, Pichler, P.4
Source: AIP Conference Proceedings. Nov2012, Vol. 1496 Issue 1, p241-244. 4p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 83255796
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PubType: Conference
PubTypeId: conference
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22AIP+Conference+Proceedings%22">AIP Conference Proceedings</searchLink>. Nov2012, Vol. 1496 Issue 1, p241-244. 4p.
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        Value: 10.1063/1.4766533
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        Text: English
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      – TitleFull: Modeling boron profiles in silicon after pulsed excimer laser annealing.
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            NameFull: Hackenberg, M.
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              Text: Nov2012
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