Topological Insulating States in Laterally Patterned Ordinary Semiconductors.
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| Title: | Topological Insulating States in Laterally Patterned Ordinary Semiconductors. |
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| Authors: | Sushkov, O. P.1, Neto, A. H. Castro2 |
| Source: | Physical Review Letters. 5/3/2013, Vol. 110 Issue 18, p186601-1-186601-5. 5p. 3 Diagrams. |
| Database: | Academic Search Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 87956169 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=87956169 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1103/PhysRevLett.110.186601 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 186601-1 Titles: – TitleFull: Topological Insulating States in Laterally Patterned Ordinary Semiconductors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sushkov, O. P. – PersonEntity: Name: NameFull: Neto, A. H. Castro IsPartOfRelationships: – BibEntity: Dates: – D: 03 M: 05 Text: 5/3/2013 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 00319007 Numbering: – Type: volume Value: 110 – Type: issue Value: 18 Titles: – TitleFull: Physical Review Letters Type: main |
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