APA (7th ed.) Citation

Dubost, V., Cren, T., Vaju, C., Cario, L., Corraze, B., Janod, E., . . . Roditchev, D. (2013). Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8. Nano Letters, 13(8), 3648. https://doi.org/10.1021/nl401510p

Chicago Style (17th ed.) Citation

Dubost, Vincent, Tristan Cren, Cristian Vaju, Laurent Cario, Benoît Corraze, Etienne Janod, François Debontridder, and Dimitri Roditchev. "Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8." Nano Letters 13, no. 8 (2013): 3648. https://doi.org/10.1021/nl401510p.

MLA (9th ed.) Citation

Dubost, Vincent, et al. "Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8." Nano Letters, vol. 13, no. 8, 2013, p. 3648, https://doi.org/10.1021/nl401510p.