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Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8.

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Bibliographic Details
Title:	Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8.
Authors:	Dubost, Vincent¹, Cren, Tristan¹, Vaju, Cristian¹, Cario, Laurent¹, Corraze, Benoît¹, Janod, Etienne¹, Debontridder, François¹, Roditchev, Dimitri¹
Source:	Nano Letters. Aug2013, Vol. 13 Issue 8, p3648-3653. 6p.
Database:	Academic Search Ultimate

Description
ISSN:	15306984
DOI:	10.1021/nl401510p