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Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8.

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Bibliographic Details
Title: Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8.
Authors: Dubost, Vincent1, Cren, Tristan1, Vaju, Cristian1, Cario, Laurent1, Corraze, Benoît1, Janod, Etienne1, Debontridder, François1, Roditchev, Dimitri1
Source: Nano Letters. Aug2013, Vol. 13 Issue 8, p3648-3653. 6p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 89719566
AccessLevel: 2
PubType: Academic Journal
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      – TitleFull: Resistive Switching at the Nanoscale in the Mott InsulatorCompound GaTa4Se8.
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