APA (7th ed.) Citation

Djomeni, L., Mourier, T., Minoret, S., Fadloun, S., Piallat, F., Burgess, S., . . . Maitrejean, S. (2014). Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias. Microelectronic Engineering, 120, 127. https://doi.org/10.1016/j.mee.2013.11.010

Chicago Style (17th ed.) Citation

Djomeni, Larissa, et al. "Study of Low Temperature MOCVD Deposition of TiN Barrier Layer for Copper Diffusion in High Aspect Ratio Through Silicon Vias." Microelectronic Engineering 120 (2014): 127. https://doi.org/10.1016/j.mee.2013.11.010.

MLA (9th ed.) Citation

Djomeni, Larissa, et al. "Study of Low Temperature MOCVD Deposition of TiN Barrier Layer for Copper Diffusion in High Aspect Ratio Through Silicon Vias." Microelectronic Engineering, vol. 120, 2014, p. 127, https://doi.org/10.1016/j.mee.2013.11.010.