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Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias.

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Title: Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias.
Authors: Djomeni, Larissa1,2 monica-larissa.djomeni-weleguela@cea.fr, Mourier, Thierry1, Minoret, Stéphane1, Fadloun, Sabrina3, Piallat, Fabien1, Burgess, Steve4, Price, Andrew4, Zhou, Yun4, Jones, Christopher4, Mathiot, Daniel2, Maitrejean, Sylvain1
Source: Microelectronic Engineering. May2014, Vol. 120, p127-132. 6p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 95502682
AccessLevel: 2
PubType: Academic Journal
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  Data: Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias.
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. May2014, Vol. 120, p127-132. 6p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=95502682
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        Value: 10.1016/j.mee.2013.11.010
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              Text: May2014
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