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A Ka-band SiGe BICMOS power amplifier with 24 dBm output power.

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Title: A Ka-band SiGe BICMOS power amplifier with 24 dBm output power.
Authors: Pierco, Ramses1, Torfs, Guy1, De Keulenaer, Timothy1, Vandecasteele, Bjorn2, Missinne, Jeroen2, Bauwelinck, Johan3
Source: Microwave & Optical Technology Letters. Mar2015, Vol. 57 Issue 3, p718-722. 5p. 7 Diagrams, 1 Chart, 3 Graphs.
Subjects: BiCMOS memory circuits, Electric power, Silicon compounds, Electric transformers, Electric potential
Abstract: ABSTRACT A power amplifier (PA) with a saturated output power of 24.1 dBm at 32 GHz, fabricated in a 250 nm SiGe BiCMOS technology, is presented. This PA operates in Class AB and achieves a power-added efficiency (PAE) of 7.2% with a gain of approximately 25 dB and a die area of 1.70 mm2. A differential cascode output stage with a self-shielded balun is used, allowing to maximize the output voltage swing. The driver stage consists of translinear loops to bias and linearize the output stage while a transformer-type power combiner is implemented to achieve broadband on-chip power combination. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:718-722, 2015 [ABSTRACT FROM AUTHOR]
Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Data: A Ka-band SiGe BICMOS power amplifier with 24 dBm output power.
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  Data: <searchLink fieldCode="AR" term="%22Pierco%2C+Ramses%22">Pierco, Ramses</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Torfs%2C+Guy%22">Torfs, Guy</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22De+Keulenaer%2C+Timothy%22">De Keulenaer, Timothy</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Vandecasteele%2C+Bjorn%22">Vandecasteele, Bjorn</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Missinne%2C+Jeroen%22">Missinne, Jeroen</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bauwelinck%2C+Johan%22">Bauwelinck, Johan</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microwave+%26+Optical+Technology+Letters%22">Microwave & Optical Technology Letters</searchLink>. Mar2015, Vol. 57 Issue 3, p718-722. 5p. 7 Diagrams, 1 Chart, 3 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22BiCMOS+memory+circuits%22">BiCMOS memory circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+power%22">Electric power</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+compounds%22">Silicon compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+transformers%22">Electric transformers</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink>
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  Data: ABSTRACT A power amplifier (PA) with a saturated output power of 24.1 dBm at 32 GHz, fabricated in a 250 nm SiGe BiCMOS technology, is presented. This PA operates in Class AB and achieves a power-added efficiency (PAE) of 7.2% with a gain of approximately 25 dB and a die area of 1.70 mm2. A differential cascode output stage with a self-shielded balun is used, allowing to maximize the output voltage swing. The driver stage consists of translinear loops to bias and linearize the output stage while a transformer-type power combiner is implemented to achieve broadband on-chip power combination. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:718-722, 2015 [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1002/mop.28933
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        Text: English
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      – SubjectFull: Silicon compounds
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