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Annealing and quenching effect in the localized states emission on nanosilicon fabricated by pulsed laser.

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Title: Annealing and quenching effect in the localized states emission on nanosilicon fabricated by pulsed laser.
Authors: Huang, Wei-Qi1 WQHuang2001@yahoo.com, Liu, Shi-Rong2, Dong, Ti-Ger1, Wang, Gang1, Qin, Cao-Jian2
Source: Optics Communications. May2015, Vol. 342, p79-82. 4p.
Subjects: Nanosilicon, Quenching (Chemistry), Annealing of metals, Microfabrication, Pulsed lasers, Plasmonics
Abstract: Plasmonic lattice structure induced by pulsed laser was observed in the Talbot reflection effect image, which could be used to fabricate nanostructures on silicon. It is interesting that annealing and quenching effects obviously affect the localized states emission on nanosilicon prepared by pulsed laser, in which the annealing parameters are important, such as temperature and time. It is found that the laser annealing is a good way to replace the traditional annealing way in furnace, especially for rapidly annealing. A physical model is made to explain the annealing and quenching effects in the localized states emission on nanosilicon. [ABSTRACT FROM AUTHOR]
Copyright of Optics Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 101138507
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Annealing and quenching effect in the localized states emission on nanosilicon fabricated by pulsed laser.
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  Data: <searchLink fieldCode="AR" term="%22Huang%2C+Wei-Qi%22">Huang, Wei-Qi</searchLink><relatesTo>1</relatesTo><i> WQHuang2001@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Shi-Rong%22">Liu, Shi-Rong</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Dong%2C+Ti-Ger%22">Dong, Ti-Ger</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Gang%22">Wang, Gang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Qin%2C+Cao-Jian%22">Qin, Cao-Jian</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Optics+Communications%22">Optics Communications</searchLink>. May2015, Vol. 342, p79-82. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Nanosilicon%22">Nanosilicon</searchLink><br /><searchLink fieldCode="DE" term="%22Quenching+%28Chemistry%29%22">Quenching (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+metals%22">Annealing of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Pulsed+lasers%22">Pulsed lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Plasmonics%22">Plasmonics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Plasmonic lattice structure induced by pulsed laser was observed in the Talbot reflection effect image, which could be used to fabricate nanostructures on silicon. It is interesting that annealing and quenching effects obviously affect the localized states emission on nanosilicon prepared by pulsed laser, in which the annealing parameters are important, such as temperature and time. It is found that the laser annealing is a good way to replace the traditional annealing way in furnace, especially for rapidly annealing. A physical model is made to explain the annealing and quenching effects in the localized states emission on nanosilicon. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Optics Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.optcom.2014.12.041
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 79
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      – SubjectFull: Nanosilicon
        Type: general
      – SubjectFull: Quenching (Chemistry)
        Type: general
      – SubjectFull: Annealing of metals
        Type: general
      – SubjectFull: Microfabrication
        Type: general
      – SubjectFull: Pulsed lasers
        Type: general
      – SubjectFull: Plasmonics
        Type: general
    Titles:
      – TitleFull: Annealing and quenching effect in the localized states emission on nanosilicon fabricated by pulsed laser.
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            NameFull: Huang, Wei-Qi
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              M: 05
              Text: May2015
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              Y: 2015
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              Value: 342
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