Annealing and quenching effect in the localized states emission on nanosilicon fabricated by pulsed laser.
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| Title: | Annealing and quenching effect in the localized states emission on nanosilicon fabricated by pulsed laser. |
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| Authors: | Huang, Wei-Qi1 WQHuang2001@yahoo.com, Liu, Shi-Rong2, Dong, Ti-Ger1, Wang, Gang1, Qin, Cao-Jian2 |
| Source: | Optics Communications. May2015, Vol. 342, p79-82. 4p. |
| Subjects: | Nanosilicon, Quenching (Chemistry), Annealing of metals, Microfabrication, Pulsed lasers, Plasmonics |
| Abstract: | Plasmonic lattice structure induced by pulsed laser was observed in the Talbot reflection effect image, which could be used to fabricate nanostructures on silicon. It is interesting that annealing and quenching effects obviously affect the localized states emission on nanosilicon prepared by pulsed laser, in which the annealing parameters are important, such as temperature and time. It is found that the laser annealing is a good way to replace the traditional annealing way in furnace, especially for rapidly annealing. A physical model is made to explain the annealing and quenching effects in the localized states emission on nanosilicon. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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