APA (7th ed.) Citation

Chou, Y., Lai, R., Li, G., Hua, J., Nam, P., Grundbacher, R., . . . Streit, D. (2003). Innovative Nitride Passivated Pseudomorphic GaAs HEMTs. IEEE Electron Device Letters, 24(1), 7. https://doi.org/10.1109/LED.2002.807313

Chicago Style (17th ed.) Citation

Chou, Y.C, et al. "Innovative Nitride Passivated Pseudomorphic GaAs HEMTs." IEEE Electron Device Letters 24, no. 1 (2003): 7. https://doi.org/10.1109/LED.2002.807313.

MLA (9th ed.) Citation

Chou, Y.C, et al. "Innovative Nitride Passivated Pseudomorphic GaAs HEMTs." IEEE Electron Device Letters, vol. 24, no. 1, 2003, p. 7, https://doi.org/10.1109/LED.2002.807313.