Bibliographic Details
| Title: |
Innovative Nitride Passivated Pseudomorphic GaAs HEMTs. |
| Authors: |
Chou, Y.C., Lai, R., Li, G.P., Jun Hua, Nam, P., Grundbacher, R., Kim, H.K., Ra, Y., Biedenbender, M., Ahlers, E., Barsky, M., Oki, A., Streit, D. |
| Source: |
IEEE Electron Device Letters. Jan2003, Vol. 24 Issue 1, p7. 3p. 5 Graphs. |
| Subjects: |
Integrated circuit passivation, Modulation-doped field-effect transistors, Nitrides |
| Abstract: |
Develops a novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) to passivate 0.15 micrometer pseudomorphic GaAs high-electron mobility transistors. Higher density and lower hydrogen concentration of HD-ICP-CVD nitrides; Exhibition of better performance in reverse breakdown voltage and transconductance. |
| Database: |
Engineering Source |
