View in EDS

Innovative Nitride Passivated Pseudomorphic GaAs HEMTs.

Saved in:
Bibliographic Details
Title: Innovative Nitride Passivated Pseudomorphic GaAs HEMTs.
Authors: Chou, Y.C., Lai, R., Li, G.P., Jun Hua, Nam, P., Grundbacher, R., Kim, H.K., Ra, Y., Biedenbender, M., Ahlers, E., Barsky, M., Oki, A., Streit, D.
Source: IEEE Electron Device Letters. Jan2003, Vol. 24 Issue 1, p7. 3p. 5 Graphs.
Subjects: Integrated circuit passivation, Modulation-doped field-effect transistors, Nitrides
Abstract: Develops a novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) to passivate 0.15 micrometer pseudomorphic GaAs high-electron mobility transistors. Higher density and lower hydrogen concentration of HD-ICP-CVD nitrides; Exhibition of better performance in reverse breakdown voltage and transconductance.
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 10168492
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Innovative Nitride Passivated Pseudomorphic GaAs HEMTs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Chou%2C+Y%2EC%2E%22">Chou, Y.C.</searchLink><br /><searchLink fieldCode="AR" term="%22Lai%2C+R%2E%22">Lai, R.</searchLink><br /><searchLink fieldCode="AR" term="%22Li%2C+G%2EP%2E%22">Li, G.P.</searchLink><br /><searchLink fieldCode="AR" term="%22Jun+Hua%22">Jun Hua</searchLink><br /><searchLink fieldCode="AR" term="%22Nam%2C+P%2E%22">Nam, P.</searchLink><br /><searchLink fieldCode="AR" term="%22Grundbacher%2C+R%2E%22">Grundbacher, R.</searchLink><br /><searchLink fieldCode="AR" term="%22Kim%2C+H%2EK%2E%22">Kim, H.K.</searchLink><br /><searchLink fieldCode="AR" term="%22Ra%2C+Y%2E%22">Ra, Y.</searchLink><br /><searchLink fieldCode="AR" term="%22Biedenbender%2C+M%2E%22">Biedenbender, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Ahlers%2C+E%2E%22">Ahlers, E.</searchLink><br /><searchLink fieldCode="AR" term="%22Barsky%2C+M%2E%22">Barsky, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Oki%2C+A%2E%22">Oki, A.</searchLink><br /><searchLink fieldCode="AR" term="%22Streit%2C+D%2E%22">Streit, D.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Jan2003, Vol. 24 Issue 1, p7. 3p. 5 Graphs.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Integrated+circuit+passivation%22">Integrated circuit passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Modulation-doped+field-effect+transistors%22">Modulation-doped field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Nitrides%22">Nitrides</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Develops a novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) to passivate 0.15 micrometer pseudomorphic GaAs high-electron mobility transistors. Higher density and lower hydrogen concentration of HD-ICP-CVD nitrides; Exhibition of better performance in reverse breakdown voltage and transconductance.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=10168492
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2002.807313
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 7
    Subjects:
      – SubjectFull: Integrated circuit passivation
        Type: general
      – SubjectFull: Modulation-doped field-effect transistors
        Type: general
      – SubjectFull: Nitrides
        Type: general
    Titles:
      – TitleFull: Innovative Nitride Passivated Pseudomorphic GaAs HEMTs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chou, Y.C.
      – PersonEntity:
          Name:
            NameFull: Lai, R.
      – PersonEntity:
          Name:
            NameFull: Li, G.P.
      – PersonEntity:
          Name:
            NameFull: Jun Hua
      – PersonEntity:
          Name:
            NameFull: Nam, P.
      – PersonEntity:
          Name:
            NameFull: Grundbacher, R.
      – PersonEntity:
          Name:
            NameFull: Kim, H.K.
      – PersonEntity:
          Name:
            NameFull: Ra, Y.
      – PersonEntity:
          Name:
            NameFull: Biedenbender, M.
      – PersonEntity:
          Name:
            NameFull: Ahlers, E.
      – PersonEntity:
          Name:
            NameFull: Barsky, M.
      – PersonEntity:
          Name:
            NameFull: Oki, A.
      – PersonEntity:
          Name:
            NameFull: Streit, D.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2003
              Type: published
              Y: 2003
          Identifiers:
            – Type: issn-print
              Value: 07413106
          Numbering:
            – Type: volume
              Value: 24
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: IEEE Electron Device Letters
              Type: main
ResultId 1