Innovative Nitride Passivated Pseudomorphic GaAs HEMTs.
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| Title: | Innovative Nitride Passivated Pseudomorphic GaAs HEMTs. |
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| Authors: | Chou, Y.C., Lai, R., Li, G.P., Jun Hua, Nam, P., Grundbacher, R., Kim, H.K., Ra, Y., Biedenbender, M., Ahlers, E., Barsky, M., Oki, A., Streit, D. |
| Source: | IEEE Electron Device Letters. Jan2003, Vol. 24 Issue 1, p7. 3p. 5 Graphs. |
| Subjects: | Integrated circuit passivation, Modulation-doped field-effect transistors, Nitrides |
| Abstract: | Develops a novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) to passivate 0.15 micrometer pseudomorphic GaAs high-electron mobility transistors. Higher density and lower hydrogen concentration of HD-ICP-CVD nitrides; Exhibition of better performance in reverse breakdown voltage and transconductance. |
| Database: | Engineering Source |
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