Complicated basins in external-cavity semiconductor lasers

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Title: Complicated basins in external-cavity semiconductor lasers
Authors: Prasad, Awadhesh1 awadhesh@enpc589.eas.asu.edu, Lai, Ying-Cheng1,2, Gavrielides, Athanasios3, Kovanis, Vassilios3
Source: Physics Letters A. Jul2003, Vol. 314 Issue 1/2, p44. 7p.
Subjects: Semiconductor lasers, Lasers
Abstract: We demonstrate that complicated basins of attraction can occur in time-delay coupled, external-cavity semiconductor lasers. In particular, we find that there can be multiple coexisting attractors associated with low-frequency fluctuations in the laser power output, and prediction of the asymptotic attractor for specific initial conditions is practically impossible. [Copyright &y& Elsevier]
Copyright of Physics Letters A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 10178966
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  Data: Complicated basins in external-cavity semiconductor lasers
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  Data: We demonstrate that complicated basins of attraction can occur in time-delay coupled, external-cavity semiconductor lasers. In particular, we find that there can be multiple coexisting attractors associated with low-frequency fluctuations in the laser power output, and prediction of the asymptotic attractor for specific initial conditions is practically impossible. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Physics Letters A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/S0375-9601(03)00880-6
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      – Code: eng
        Text: English
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      – TitleFull: Complicated basins in external-cavity semiconductor lasers
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            NameFull: Prasad, Awadhesh
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            NameFull: Lai, Ying-Cheng
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            NameFull: Gavrielides, Athanasios
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              Text: Jul2003
              Type: published
              Y: 2003
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