Reaction fronts formation during oxygen chemical diffusion in oxides.

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Title: Reaction fronts formation during oxygen chemical diffusion in oxides.
Authors: Sinder, M.1 micha@bgu.ac.il, Burshtein, Z.1, Pelleg, J.1
Source: Solid State Ionics. Jun2015, Vol. 274, p123-127. 5p.
Subjects: Electron diffusion, Oxide synthesis, Electric properties of crystals, Molecular crystals, Conduction electrons
Abstract: We present a theoretical study of the impact of oxygen diffusion in oxide crystals on the dynamic changes of metal dopants in the ionic state, and on the crystal conduction type. The analysis invokes ambipolar diffusion for all participating species: oxygen vacancies, metal dopant, holes and electrons. The species dynamics are demonstrated for an oxide of 8 eV energy gap, electron and hole diffusivities being 10 5 times larger than the oxygen vacancy one, and the dopant energy level being 1.0 eV above or 1.0 eV below the mid-gap. We obtain linkage between the oxygen chemical diffusivity and the occurrence of a reaction front. The necessary condition is the existence of a sufficiently long interval, where a power dependence of the oxygen chemical diffusivity on the ambient oxygen pressure exists. In our demonstrated system, prominent reaction fronts occur at very low and at very high ambient oxygen pressures. The fronts relate to the reversible M Me × + e ′ → ← M Me ′ reaction at the low pressures, and to the reversible M Me ′ + h • → ← M Me × reaction at high pressures, where M marks the dopant metal, and Me marks an oxide lattice constituent metal. In the mid-pressure interval, the oxygen chemical diffusivity is approximately constant, being several orders of magnitude smaller than the oxygen vacancy diffusivity. [ABSTRACT FROM AUTHOR]
Copyright of Solid State Ionics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Reaction fronts formation during oxygen chemical diffusion in oxides.
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  Data: <searchLink fieldCode="JN" term="%22Solid+State+Ionics%22">Solid State Ionics</searchLink>. Jun2015, Vol. 274, p123-127. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Electron+diffusion%22">Electron diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Oxide+synthesis%22">Oxide synthesis</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties+of+crystals%22">Electric properties of crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+crystals%22">Molecular crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Conduction+electrons%22">Conduction electrons</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: We present a theoretical study of the impact of oxygen diffusion in oxide crystals on the dynamic changes of metal dopants in the ionic state, and on the crystal conduction type. The analysis invokes ambipolar diffusion for all participating species: oxygen vacancies, metal dopant, holes and electrons. The species dynamics are demonstrated for an oxide of 8 eV energy gap, electron and hole diffusivities being 10 5 times larger than the oxygen vacancy one, and the dopant energy level being 1.0 eV above or 1.0 eV below the mid-gap. We obtain linkage between the oxygen chemical diffusivity and the occurrence of a reaction front. The necessary condition is the existence of a sufficiently long interval, where a power dependence of the oxygen chemical diffusivity on the ambient oxygen pressure exists. In our demonstrated system, prominent reaction fronts occur at very low and at very high ambient oxygen pressures. The fronts relate to the reversible M Me × + e ′ → ← M Me ′ reaction at the low pressures, and to the reversible M Me ′ + h • → ← M Me × reaction at high pressures, where M marks the dopant metal, and Me marks an oxide lattice constituent metal. In the mid-pressure interval, the oxygen chemical diffusivity is approximately constant, being several orders of magnitude smaller than the oxygen vacancy diffusivity. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid State Ionics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.ssi.2015.03.002
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 123
    Subjects:
      – SubjectFull: Electron diffusion
        Type: general
      – SubjectFull: Oxide synthesis
        Type: general
      – SubjectFull: Electric properties of crystals
        Type: general
      – SubjectFull: Molecular crystals
        Type: general
      – SubjectFull: Conduction electrons
        Type: general
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      – TitleFull: Reaction fronts formation during oxygen chemical diffusion in oxides.
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              M: 06
              Text: Jun2015
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              Y: 2015
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              Value: 274
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