View in EDS

Compressively strained Ge channels on relaxed SiGe buffer layers

Saved in:
Bibliographic Details
Title: Compressively strained Ge channels on relaxed SiGe buffer layers
Authors: Bollani, M.1 monica.bollani@mater.unimib.it, Müller, E.2, Signoretti, S.3, Beeli, C.3, Isella, G.4, Kummer, M.3, von Känel, H.3,4
Source: Materials Science & Engineering: B. Aug2003, Vol. 101 Issue 1-3, p102. 4p.
Subjects: Transmission electron microscopy, Quantum wells, Plasma density
Abstract: Strain-induced roughening and dislocation formation has been studied by high-resolution transmission electron microscopy (HRTEM) in compressively strained Ge quantum wells on linearly graded SiGe buffer layers grown by low-energy plasma-enhanced chemical vapour deposition (LEPECVD). We show that for appropriately chosen plasma densities and substrate temperatures, abrupt interfaces can be achieved on both sides of the Ge channels, when additional hydrogen is supplied to the reactive gases, even for channel widths above the critical thickness for dislocation formation. Optimized modulation doped Ge quantum wells (MODQWs) exhibit the highest hole mobilities observed to date, approaching values of ∼90000 cm2 V−1 s−1 for a sheet density of ∼6×1011 cm−2 at liquid He temperatures. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 10232720
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Compressively strained Ge channels on relaxed SiGe buffer layers
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Bollani%2C+M%2E%22">Bollani, M.</searchLink><relatesTo>1</relatesTo><i> monica.bollani@mater.unimib.it</i><br /><searchLink fieldCode="AR" term="%22Müller%2C+E%2E%22">Müller, E.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Signoretti%2C+S%2E%22">Signoretti, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Beeli%2C+C%2E%22">Beeli, C.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Isella%2C+G%2E%22">Isella, G.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Kummer%2C+M%2E%22">Kummer, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22von+Känel%2C+H%2E%22">von Känel, H.</searchLink><relatesTo>3,4</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Aug2003, Vol. 101 Issue 1-3, p102. 4p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+density%22">Plasma density</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Strain-induced roughening and dislocation formation has been studied by high-resolution transmission electron microscopy (HRTEM) in compressively strained Ge quantum wells on linearly graded SiGe buffer layers grown by low-energy plasma-enhanced chemical vapour deposition (LEPECVD). We show that for appropriately chosen plasma densities and substrate temperatures, abrupt interfaces can be achieved on both sides of the Ge channels, when additional hydrogen is supplied to the reactive gases, even for channel widths above the critical thickness for dislocation formation. Optimized modulation doped Ge quantum wells (MODQWs) exhibit the highest hole mobilities observed to date, approaching values of ∼90000 cm2 V−1 s−1 for a sheet density of ∼6×1011 cm−2 at liquid He temperatures. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=10232720
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/S0921-5107(02)00662-1
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 102
    Subjects:
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Quantum wells
        Type: general
      – SubjectFull: Plasma density
        Type: general
    Titles:
      – TitleFull: Compressively strained Ge channels on relaxed SiGe buffer layers
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Bollani, M.
      – PersonEntity:
          Name:
            NameFull: Müller, E.
      – PersonEntity:
          Name:
            NameFull: Signoretti, S.
      – PersonEntity:
          Name:
            NameFull: Beeli, C.
      – PersonEntity:
          Name:
            NameFull: Isella, G.
      – PersonEntity:
          Name:
            NameFull: Kummer, M.
      – PersonEntity:
          Name:
            NameFull: von Känel, H.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 08
              Text: Aug2003
              Type: published
              Y: 2003
          Identifiers:
            – Type: issn-print
              Value: 09215107
          Numbering:
            – Type: volume
              Value: 101
            – Type: issue
              Value: 1-3
          Titles:
            – TitleFull: Materials Science & Engineering: B
              Type: main
ResultId 1