Palladium diffusion in germanium.
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| Title: | Palladium diffusion in germanium. |
|---|---|
| Authors: | Chroneos, A. ab8104@coventry.ac.uk, Vovk, R.1 |
| Source: | Journal of Materials Science: Materials in Electronics. Jun2015, Vol. 26 Issue 6, p3787-3789. 3p. |
| Subjects: | Semiconductor diffusion, Metal oxide semiconductor field-effect transistors, Silicon, Semiconductor doping, Palladium, Germanium, P-type semiconductors |
| Abstract: | Palladium diffusion in germanium is fundamentally and technologically important as it has an extremely low activation energy and this can impact metal induced lateral crystallisation to produce large grain crystals. Recent theoretical studies calculated that the activation energy of migration of palladium in germanium is 0.03 eV. This constitute the experimental determination of the palladium diffusion properties very difficult. In the present study we calculate palladium diffusivity in germanium by employing theoretical results and comparing to the diffusion of copper in germanium. Finally, by employing a thermodynamic model we derive a relation describing palladium diffusivity to bulk materials properties. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Items | – Name: Title Label: Title Group: Ti Data: Palladium diffusion in germanium. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chroneos%2C+A%2E%22">Chroneos, A.</searchLink><i> ab8104@coventry.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Vovk%2C+R%2E%22">Vovk, R.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jun2015, Vol. 26 Issue 6, p3787-3789. 3p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+doping%22">Semiconductor doping</searchLink><br /><searchLink fieldCode="DE" term="%22Palladium%22">Palladium</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22P-type+semiconductors%22">P-type semiconductors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Palladium diffusion in germanium is fundamentally and technologically important as it has an extremely low activation energy and this can impact metal induced lateral crystallisation to produce large grain crystals. Recent theoretical studies calculated that the activation energy of migration of palladium in germanium is 0.03 eV. This constitute the experimental determination of the palladium diffusion properties very difficult. In the present study we calculate palladium diffusivity in germanium by employing theoretical results and comparing to the diffusion of copper in germanium. Finally, by employing a thermodynamic model we derive a relation describing palladium diffusivity to bulk materials properties. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-015-2903-9 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 3787 Subjects: – SubjectFull: Semiconductor diffusion Type: general – SubjectFull: Metal oxide semiconductor field-effect transistors Type: general – SubjectFull: Silicon Type: general – SubjectFull: Semiconductor doping Type: general – SubjectFull: Palladium Type: general – SubjectFull: Germanium Type: general – SubjectFull: P-type semiconductors Type: general Titles: – TitleFull: Palladium diffusion in germanium. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chroneos, A. – PersonEntity: Name: NameFull: Vovk, R. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2015 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 26 – Type: issue Value: 6 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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