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Effect of de-trapping on carrier transport process in semi-insulating CdZnTe.

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Title: Effect of de-trapping on carrier transport process in semi-insulating CdZnTe.
Authors: Guo Rong-Rong1, Jie Wan-Qi1,2, Zha Gang-Qiang1, Xu Ya-Dong1, Feng Tao1, Wang Tao1, Du Zhuo-Tong1
Source: Chinese Physics B. Jun2015, Vol. 24 Issue 6, p1-1. 1p.
Subjects: Detectors, Optical beam induced current, Electric fields, Electrons, Surface recombination
Abstract: The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32×10−3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process. [ABSTRACT FROM AUTHOR]
Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 102999812
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Effect of de-trapping on carrier transport process in semi-insulating CdZnTe.
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  Data: <searchLink fieldCode="JN" term="%22Chinese+Physics+B%22">Chinese Physics B</searchLink>. Jun2015, Vol. 24 Issue 6, p1-1. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Detectors%22">Detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+beam+induced+current%22">Optical beam induced current</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink><br /><searchLink fieldCode="DE" term="%22Electrons%22">Electrons</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+recombination%22">Surface recombination</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32×10−3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1088/1674-1056/24/6/067203
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      – Code: eng
        Text: English
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      – SubjectFull: Optical beam induced current
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      – SubjectFull: Electric fields
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      – SubjectFull: Electrons
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              Text: Jun2015
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