A 40–67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP.
Saved in:
| Title: | A 40–67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP. |
|---|---|
| Authors: | Bassi, Matteo1, Zhao, Junlei1, Bevilacqua, Andrea2, Ghilioni, Andrea1, Mazzanti, Andrea1, Svelto, Francesco1 |
| Source: | IEEE Journal of Solid-State Circuits. Jul2015, Vol. 50 Issue 7, p1618-1628. 11p. |
| Subjects: | Complementary metal oxide semiconductors, Bandwidths, Topological transformation groups, Broadband amplifiers, Impedance matching |
| Abstract: | Pushed by the availability of large fractional bandwidths, many well-established applications are focusing mm-wave spectrum for product deployment. Generation of broadband power at mm-waves is challenging because a key target such as the efficiency trades with the gain-bandwidth (GBW) product. The major limit is the capacitive parasitics at the interstage between driver and power devices. The latter are designed with a large form factor so as to deliver the desired output power and are commonly biased in class-AB to achieve high drain efficiency, penalizing GBW. In this paper, a design methodology for interstage and output matching networks targeting large fractional bandwidth and high efficiency is proposed. Leveraging inductively coupled resonators, we apply Norton transformations for impedance scaling. In both networks, topological transformations are employed to include a transformer, achieve the desired load impedance and minimize the number of components. A two-stage differential PA with neutralized common source stages has been realized in 28 nm CMOS using low-power devices. The PA delivers 13 dBm saturated output power over the 40–67 GHz bandwidth with a peak power-added efficiency of 16% without power combining. To the best of author's knowledge, the presented PA shows state-of-the-art performances with the largest fractional bandwidth among bulk CMOS mm-wave PAs reported so far. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Journal of Solid-State Circuits is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 103431879 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: A 40–67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Bassi%2C+Matteo%22">Bassi, Matteo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhao%2C+Junlei%22">Zhao, Junlei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bevilacqua%2C+Andrea%22">Bevilacqua, Andrea</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ghilioni%2C+Andrea%22">Ghilioni, Andrea</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mazzanti%2C+Andrea%22">Mazzanti, Andrea</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Svelto%2C+Francesco%22">Svelto, Francesco</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Solid-State+Circuits%22">IEEE Journal of Solid-State Circuits</searchLink>. Jul2015, Vol. 50 Issue 7, p1618-1628. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Bandwidths%22">Bandwidths</searchLink><br /><searchLink fieldCode="DE" term="%22Topological+transformation+groups%22">Topological transformation groups</searchLink><br /><searchLink fieldCode="DE" term="%22Broadband+amplifiers%22">Broadband amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Impedance+matching%22">Impedance matching</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Pushed by the availability of large fractional bandwidths, many well-established applications are focusing mm-wave spectrum for product deployment. Generation of broadband power at mm-waves is challenging because a key target such as the efficiency trades with the gain-bandwidth (GBW) product. The major limit is the capacitive parasitics at the interstage between driver and power devices. The latter are designed with a large form factor so as to deliver the desired output power and are commonly biased in class-AB to achieve high drain efficiency, penalizing GBW. In this paper, a design methodology for interstage and output matching networks targeting large fractional bandwidth and high efficiency is proposed. Leveraging inductively coupled resonators, we apply Norton transformations for impedance scaling. In both networks, topological transformations are employed to include a transformer, achieve the desired load impedance and minimize the number of components. A two-stage differential PA with neutralized common source stages has been realized in 28 nm CMOS using low-power devices. The PA delivers 13 dBm saturated output power over the 40–67 GHz bandwidth with a peak power-added efficiency of 16% without power combining. To the best of author's knowledge, the presented PA shows state-of-the-art performances with the largest fractional bandwidth among bulk CMOS mm-wave PAs reported so far. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Journal of Solid-State Circuits is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=103431879 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/JSSC.2015.2409295 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 1618 Subjects: – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Bandwidths Type: general – SubjectFull: Topological transformation groups Type: general – SubjectFull: Broadband amplifiers Type: general – SubjectFull: Impedance matching Type: general Titles: – TitleFull: A 40–67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bassi, Matteo – PersonEntity: Name: NameFull: Zhao, Junlei – PersonEntity: Name: NameFull: Bevilacqua, Andrea – PersonEntity: Name: NameFull: Ghilioni, Andrea – PersonEntity: Name: NameFull: Mazzanti, Andrea – PersonEntity: Name: NameFull: Svelto, Francesco IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2015 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 00189200 Numbering: – Type: volume Value: 50 – Type: issue Value: 7 Titles: – TitleFull: IEEE Journal of Solid-State Circuits Type: main |
| ResultId | 1 |
